Manufacturer Part Number
IPA60R280E6
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a single transistor - MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
Product Features and Performance
600V Drain-Source Voltage
280mΩ maximum On-Resistance
8A continuous Drain Current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 950pF
Maximum Power Dissipation of 32W
Product Advantages
Efficient power conversion with low on-resistance
Reliable high-voltage operation
Wide temperature range for versatile applications
Compact TO-220 package for easy integration
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 280mΩ @ 6.5A, 10V
Continuous Drain Current (Id): 13.8A @ 25°C
Input Capacitance (Ciss): 950pF @ 100V
Power Dissipation (Ptot): 32W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220 package with reliable through-hole mounting
Compatibility
This MOSFET is compatible with a wide range of power electronics applications, particularly in the fields of:
Application Areas
Switch-mode power supplies
Inverters and converters
Motor drives
Lighting ballasts
Industrial automation and control
Product Lifecycle
The IPA60R280E6 is an active and currently available product from Infineon Technologies. There are no indications of this product nearing discontinuation, and replacement or upgrade options may be available.
Several Key Reasons to Choose This Product
Efficient power conversion with low on-resistance for improved energy efficiency
Reliable high-voltage operation up to 600V for wide-ranging applications
Wide operating temperature range of -55°C to 150°C for use in diverse environments
Compact TO-220 package enables easy integration into power electronics designs
RoHS3 compliance for environmentally-friendly applications
