Manufacturer Part Number
IPA60R280P7SXKSA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a transistor in the FET (Field-Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) category.
Product Features and Performance
Drain to Source Voltage (Vdss) of 600 V
Maximum Gate-Source Voltage (Vgs) of ±20 V
On-State Resistance (Rds On) of 280 mOhm @ 3.8 A, 10 V
Continuous Drain Current (Id) of 12 A at 25°C
Input Capacitance (Ciss) of 761 pF @ 400 V
Power Dissipation (Max) of 24 W at Tc
N-Channel FET Type
Threshold Voltage (Vgs(th)) of 4 V @ 190 A
Drive Voltage (Max Rds On, Min Rds On) of 10 V
Gate Charge (Qg) of 18 nC @ 10 V
Product Advantages
High voltage rating of 600 V
Low on-state resistance for improved efficiency
Suitable for high-power applications
Wide operating temperature range of -40°C to 150°C
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Gate-Source Voltage (Vgs): ±20 V
On-State Resistance (Rds On): 280 mOhm
Continuous Drain Current (Id): 12 A
Input Capacitance (Ciss): 761 pF
Power Dissipation (Max): 24 W
Quality and Safety Features
RoHS3 Compliant
Through-hole mounting for secure installation
Compatibility
Can be used in a variety of high-power electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Switchmode power supplies
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage rating of 600 V for use in high-power applications
Low on-state resistance for improved efficiency
Wide operating temperature range of -40°C to 150°C
RoHS3 compliance for environmental safety
Through-hole mounting for secure installation
