Manufacturer Part Number
IPA60R299CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the CoolMOS series
Designed for a wide range of power conversion applications
Product Features and Performance
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 299mΩ @ 6.6A, 10V
Continuous Drain Current (Id): 11A @ 25°C (Tc)
Input Capacitance (Ciss): 1100pF @ 100V
Power Dissipation (Pd): 33W (Tc)
Operating Temperature Range: -55°C to 150°C (Tj)
Product Advantages
Low on-state resistance for high efficiency
High voltage capability for use in high-voltage power conversion
Fast switching performance
Robust design for reliable operation
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 3.5V @ 440A
Gate Charge (Qg): 29nC @ 10V
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Reliable performance in industrial-grade applications
Compatibility
Compatible with a wide range of power conversion and control systems
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial electronics
Renewable energy systems
Product Lifecycle
Currently in production
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Robust and reliable design for demanding applications
Wide operating temperature range
Compatibility with various power conversion systems
Compliance with RoHS3 standards for environmental responsibility