Manufacturer Part Number
IPA50R299CP
Manufacturer
Infineon Technologies
Introduction
The IPA50R299CP is a high-performance N-channel power MOSFET from Infineon Technologies, designed for use in a variety of power electronics applications.
Product Features and Performance
500V drain-to-source voltage rating
299mΩ maximum on-resistance
12A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1190pF
High power dissipation of 104W
Product Advantages
Excellent power efficiency due to low on-resistance
Ability to withstand high voltages and currents
Wide temperature range for versatile applications
Compact TO-220 package for easy integration
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 299mΩ
Drain Current (Id): 12A
Input Capacitance (Ciss): 1190pF
Power Dissipation (Pd): 104W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
The IPA50R299CP is a direct replacement for a variety of power MOSFET devices and can be used in many power electronics circuits and systems.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial automation and control systems
Product Lifecycle
The IPA50R299CP is a current production device and is not nearing discontinuation. Replacement or upgraded options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Wide operating temperature range
Compact and easy-to-use package
Proven reliability and quality
Broad compatibility for various applications
