Manufacturer Part Number
IPA50R380CE
Manufacturer
Infineon Technologies
Introduction
The IPA50R380CE is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
500V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
380mOhm Drain to Source On-Resistance (Rds(on)) at 3.2A, 13V
9A Continuous Drain Current (Id) at 25°C
584pF Input Capacitance (Ciss) at 100V
2W Power Dissipation (Max) at Tc
5V Gate Threshold Voltage (Vgs(th)) at 260A
8nC Gate Charge (Qg) at 10V
Product Advantages
High voltage operation
Low on-resistance
High current capability
Suitable for high-power, high-efficiency applications
Key Technical Parameters
MOSFET Technology
TO-220-3 Package
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 500V
Gate to Source Voltage (Vgs): ±20V
Drain to Source On-Resistance (Rds(on)): 380mOhm
Quality and Safety Features
Reliable and robust design
Compliance with safety standards
Compatibility
Compatible with various high-power, high-efficiency applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement models
Key Reasons to Choose This Product
High voltage capability
Low on-resistance for improved efficiency
High current handling capacity
Suitable for a wide range of high-power, high-efficiency applications
Reliable and robust design
IPA6041GTRPBFIR