Manufacturer Part Number
IPA50R350CP
Manufacturer
Infineon Technologies
Introduction
The IPA50R350CP is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
High voltage MOSFET with a drain to source voltage rating of 500V
Low on-resistance of 350mOhm at 5.6A and 10V gate voltage
Continuous drain current of 10A at 25°C case temperature
Operating temperature range of -55°C to 150°C
Input capacitance of 1020pF at 100V drain-source voltage
Power dissipation of 32W at 25°C case temperature
Product Advantages
High voltage and low on-resistance for efficient power conversion applications
Robust design for high temperature operation
Compact TO-220 package for easy integration
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Gate to Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 350mOhm @ 5.6A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Through-hole mounting for reliable connections
Compatibility
The IPA50R350CP is a standard N-channel MOSFET that can be used in a variety of power conversion and control applications.
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
The IPA50R350CP is an active product and is currently available from Infineon. There are no known plans for discontinuation at this time.
Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power conversion
Robust design for high temperature operation
Compact TO-220 package for easy integration
RoHS3 compliance for environmental responsibility
Widely compatible for use in a variety of power electronics applications
