Manufacturer Part Number
IPA50R280CEXKSA2
Manufacturer
Infineon Technologies
Introduction
The IPA50R280CEXKSA2 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for various power electronics applications.
Product Features and Performance
500V drain-to-source voltage (Vdss)
280mΩ maximum on-resistance (Rds(on)) at 4.2A and 13V
5A continuous drain current (Id) at 25°C
4W maximum power dissipation (Tc)
Fast switching capabilities with low gate charge (Qg)
Wide operating temperature range of -40°C to 150°C
Product Advantages
Excellent energy efficiency due to low on-resistance
High power density and compact design
Robust performance in high-voltage, high-current applications
Reliable and durable construction
Key Technical Parameters
Vdss: 500V
Vgs(max): ±20V
Rds(on) (max): 280mΩ @ 4.2A, 13V
Id (continuous): 7.5A @ 25°C
Power Dissipation (max): 30.4W (Tc)
Input Capacitance (Ciss): 773pF @ 100V
Gate Charge (Qg): 32.6nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Reliable and durable construction
Compatibility
Compatible with a wide range of power electronics systems and circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Key Reasons to Choose
Excellent energy efficiency and low on-resistance
High power density and compact design
Reliable performance in high-voltage, high-current applications
Wide operating temperature range
RoHS3 compliance for environmental responsibility
