Manufacturer Part Number
IPA50R190CE
Manufacturer
Infineon Technologies
Introduction
The IPA50R190CE is a high-performance discrete N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
500V Drain-Source Voltage (Vdss)
190mΩ Maximum On-Resistance (Rds(on))
5A Continuous Drain Current (Id) at 25°C
32W Maximum Power Dissipation
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High voltage rating for versatile applications
High current handling capability
Robust design for reliable operation
Key Technical Parameters
Vdss: 500V
Vgs (max): ±20V
Rds(on) (max): 190mΩ @ 6.2A, 13V
Ciss (max): 1137pF @ 100V
Qg (max): 47.2nC @ 10V
Quality and Safety Features
MOSFET technology for high reliability
Through-hole mounting for secure installation
Compliant with relevant safety standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Actively supported by Infineon Technologies
No known plans for discontinuation
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and robustness
Versatile application capabilities
Comprehensive technical support from Infineon
