Manufacturer Part Number
IPA126N10N3G
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching characteristics
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Optimized for hard-switching applications
Designed for industrial, consumer, and automotive applications
Product Advantages
Improved energy efficiency
Reduced power dissipation
Increased system reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 12.6mΩ @ 35A, 10V
Continuous Drain Current (Id): 35A @ 25°C
Input Capacitance (Ciss): 2500pF @ 50V
Power Dissipation (Ptot): 33W @ Tc
Quality and Safety Features
Compliant with RoHS3 directive
Robust package design for reliable operation
Compatibility
Suitable for a wide range of industrial, consumer, and automotive applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Automotive electronics
Product Lifecycle
The IPA126N10N3G is an active product, with no plans for discontinuation. Replacement or upgrade options may be available from Infineon.
Key Reasons to Choose This Product
Excellent efficiency and low power dissipation
Fast switching performance for high-frequency applications
Robust and reliable design for industrial and automotive use
Broad compatibility and suitability for various applications