Manufacturer Part Number
IPA180N10N3G
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor in a TO-220-3 package
Product Features and Performance
Extremely low on-resistance for improved efficiency
High current capability up to 28A
Wide operating temperature range from -55°C to 175°C
Low gate charge for high-speed switching
Robust avalanche capability
Product Advantages
Optimal trade-off between low on-resistance and gate charge
Excellent thermal performance for high-power applications
Reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 18mΩ @ 28A, 10V
Continuous Drain Current (Id): 28A @ 25°C
Input Capacitance (Ciss): 1800pF @ 50V
Power Dissipation (Tc): 30W
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and switching circuits.
Application Areas
Industrial automation equipment
Power supplies
Motor drives
Switching circuits
Product Lifecycle
This product is an active and widely available MOSFET solution from Infineon. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust design for reliable operation in harsh environments
Optimal trade-off between low on-resistance and gate charge for high-efficiency power conversion
Wide availability and long-term support from a leading semiconductor manufacturer
