Manufacturer Part Number
IPA50R500CE
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with CoolMOS technology for efficient power conversion applications.
Product Features and Performance
Operates at high voltages up to 500V
Low on-state resistance for low conduction losses
Fast switching for high-frequency operation
Optimized gate charge for efficient driving
Wide operating temperature range from -40°C to 150°C
Product Advantages
Excellent efficiency and power density
Reduced system size and cost
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 500mΩ @ 2.3A, 13V
Continuous Drain Current (Id): 7.6A @ 25°C
Input Capacitance (Ciss): 433pF @ 100V
Power Dissipation (Ptot): 28W @ 25°C
Quality and Safety Features
Meets stringent quality and reliability standards
RoHS and REACH compliant
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Welding equipment
Lighting ballasts
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Excellent efficiency and power density for improved system performance
Reliable and robust design for long-term operation
Wide operating temperature range for versatile application use
Optimized gate charge and low on-state resistance for efficient driving and low conduction losses
Compatibility with a broad range of power conversion applications
IPA50R520CEINF