Manufacturer Part Number
IHP10T120
Manufacturer
Infineon Technologies
Introduction
High-performance discrete IGBT transistor
Product Features and Performance
Trench Field Stop IGBT technology
Low on-state voltage drop
Fast switching speed
Low switching losses
Rugged and reliable performance
Product Advantages
Efficient power conversion
Improved system efficiency
Compact design
Key Technical Parameters
Collector-Emitter Voltage: 1200V
Collector Current (max): 16A
On-state Voltage Drop (max): 2.2V
Reverse Recovery Time: 115ns
Gate Charge: 53nC
Operating Temperature: -40°C to 150°C
Quality and Safety Features
Robust and durable construction
Compliance with safety standards
Compatibility
Suitable for various power conversion applications
Application Areas
Motor drives
Power supplies
Inverters
Renewable energy systems
Product Lifecycle
Available and actively supported
Key Reasons to Choose this Product
High efficiency and low losses
Fast switching performance
Excellent reliability and thermal management
Wide operating temperature range
Compatibility with diverse applications