Manufacturer Part Number
CY7C1021DV33-10ZSXIT
Manufacturer
Infineon Technologies
Introduction
The CY7C1021DV33-10ZSXIT is a high-performance, 1Mbit SRAM memory chip designed for fast access and reliable data storage.
Product Features and Performance
Volatile Memory Type
Asynchronous SRAM Technology
1Mbit Memory Size
64K x 16 Memory Organization
Parallel Memory Interface
10ns Write Cycle Time
10ns Access Time
Operating Temperature Range: -40°C to 85°C
Product Advantages
Fast access time and write cycle facilitates quick data storage and retrieval
High reliability and stability over a broad range of temperatures
Key Technical Parameters
Memory Type: Volatile, SRAM Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Write Cycle Time Word, Page: 10ns
Access Time: 10ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Robust build ensures stable performance under extreme temperature variations
Complies with industry standards for safety and quality
Compatibility
Compatible with systems requiring a 44-TSOP II package
Easy integration into existing platforms with Parallel memory interfaces
Application Areas
Telecommunications
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
Product Status: Active
No immediate risk of discontinuation, ensuring long-term availability
Several Key Reasons to Choose This Product
Superior access speed for high-efficiency data handling
Reliable performance under a wide range of environmental conditions
Versatile compatibility with a variety of industrial applications
Long lifecycle with manufacturer support, reducing need for frequent replacements
Infineon Technologies’ reputation for quality and innovation in memory solutions
CY7C1021V33-12ICCY
CY7C1021V33-12ZCTCypress Semiconductor
CY7C1021V33-15VCTCypress Semiconductor CorpIC SRAM 1MBIT PARALLEL 44SOJ
CY7C1021V33-12ZCCypress Semiconductor CorpIC SRAM 1MBIT PARALLEL 44TSOP II