Manufacturer Part Number
CY7C1021DV33-10BVXI
Manufacturer
Infineon Technologies
Introduction
High-speed 1Mbit Static Random Access Memory (SRAM) component for electronic devices and embedded systems.
Product Features and Performance
1Mbit memory size
64K x 16 memory organization
Asynchronous SRAM technology
Parallel memory interface
Fast access time of 10 ns
Write cycle time - word, page: 10ns
Product Advantages
Robust temperature range operation from -40°C to 85°C
Easy to integrate with surface mount 48-VFBGA package
Optimized for high-speed memory applications
Low-voltage operation from 3V to 3.6V
Key Technical Parameters
Memory Type: Volatile
Format: SRAM - Asynchronous
Size: 1Mbit
Organization: 64K x 16
Interface: Parallel
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Package / Case: 48-VFBGA
Quality and Safety Features
Manufactured by Infineon Technologies, a leader in semiconductor solutions
Meets rigorous industry standards for quality and reliability
Compatibility
Compatible with various microcontrollers and processors with a parallel memory interface
Application Areas
Embedded systems
Industrial controls
Networking equipment
Gaming consoles
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Replacements or upgrades may be available, consult Infineon's product lineup
Several Key Reasons to Choose This Product
Fast access time facilitates high-speed operations
Low voltage supply reduces power consumption
High-reliability and industry-standard packaging
Wide operating temperature suitable for harsh environments
Produced by a reputable semiconductor manufacturer with a track record of quality products