Manufacturer Part Number
CY7C1021DV33-10ZSXI
Manufacturer
Infineon Technologies
Introduction
High-speed 1Mbit SRAM Memory, Parallel Interface
Product Features and Performance
Asynchronous SRAM technology
1Mbit memory size with 64K x 16 organization
Fast access time of 10ns
Write cycle time of 10ns
Product Advantages
High-speed operation for performance-critical applications
Easy integration with parallel interface
Robust temperature range for versatile use
Key Technical Parameters
Volatile Memory Type
Memory Format: SRAM
10ns Access and Write Cycle Time
3V ~ 3.6V Supply Voltage
64K x 16 Memory Organization
Quality and Safety Features
Industrial operating temperature range of -40°C ~ 85°C
Compatibility
Parallel Memory Interface compatible with various microcontrollers and processors
Application Areas
Embedded systems
High-speed computing
Telecommunications
Networking equipment
Product Lifecycle
Active status, not nearing discontinuation
Availability of replacements or upgrades not specified
Several Key Reasons to Choose This Product
High-speed data access suitable for real-time applications
Reliable operation under extreme temperature conditions
Manufactured by Infineon Technologies, a leader in semiconductor solutions
Easy to mount with Surface Mount Technology (SMT)
Versatility for use in a wide range of industrial and commercial devices