CY7C1021D-10ZSXIT - Infineon Technologies

Manufacturer Part Number

CY7C1021D-10ZSXIT

Manufacturer

Infineon Technologies

Introduction

High-performance SRAM memory chip for a range of electronic applications

Product Features and Performance

Volatile SRAM memory component

Asynchronous SRAM technology

1Mbit memory size

64K x 16 memory organization

Parallel memory interface

10ns write cycle time

10ns access time

Operates within 4.5V to 5.5V supply voltage range

Surface mount 44-TSOP II package

Supports operating temperatures from -40°C to 85°C

Product Advantages

Quick access and write times for high-speed operations

Robust temperature range for varied environments

Large enough capacity for complex processes

Stable voltage range ensuring reliable performance

Key Technical Parameters

Memory Type: Volatile SRAM

Memory Format: Asynchronous

Memory Size: 1Mbit

Organization: 64K x 16

Interface: Parallel

Write Cycle Time: 10ns

Access Time: 10ns

Voltage Supply: 4.5V ~ 5.5V

Operating Temperature Range: -40°C ~ 85°C

Mounting Type: Surface Mount

Package/Case: 44-TSOP

Quality and Safety Features

Compliant with industry standards for quality and safety

Reliable performance under temperature variations

Compatibility

Compatible with systems requiring fast, volatile memory

Suitable for parallel interface

Application Areas

Electronic data storage

Telecommunications

Embedded systems

Gaming

Industrial controllers

Product Lifecycle

Active product status

Future discontinuation not announced

Upgrades and replacements available if necessary

Several Key Reasons to Choose This Product

Fast access and write speeds for high-speed applications

Large memory capacity capable of supporting complex operations

Durable and reliable across a wide range of operating temperatures

Suitable for a broad array of applications and industries

Active product lifecycle ensuring ongoing support and availability