Manufacturer Part Number
CY7C1021D-10ZSXI
Manufacturer
Infineon Technologies
Introduction
The CY7C1021D-10ZSXI is a 1Mbit SRAM memory component from Infineon Technologies, fabricated with high-speed, asynchronous technology and designed for high-performance data storage applications.
Product Features and Performance
Memory Type: Volatile
Memory Format: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Organization: 64K x 16
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Operates within Voltage Supply from 4.5V to 5.5V
Operating Temperature range from -40°C to 85°C
Mounting Type: Surface Mount
Package / Case: 44-TSOP II
High-speed access and write capabilities
Product Advantages
Fast access and processing speeds for both read and write operations
Stable performance in a wide range of environmental conditions
Compact 44-TSOP II packaging saves board space
Key Technical Parameters
Access Time: 10 ns
Write Cycle Time - Word, Page: 10ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Memory Size: 1Mbit
Memory Interface: Parallel
Quality and Safety Features
Operates reliably across a broad temperature range from -40°C to 85°C
Stable voltage supply requirements ensuring operational integrity
Compatibility
Compatible with a wide range of microcontrollers and processors that support a parallel interface
Application Areas
Telecommunications
Networking
Gaming Consoles
Industrial automation and control systems
Product Lifecycle
Current Status: Active
The product is actively being manufactured and supplied, with no current indication of discontinuation.
Key Reasons to Choose This Product
Increased data retention and accessibility with 1Mbit size
Exceptional data transfer speed with 10ns access and write cycle time
Compatible with various microcontrollers and processors with parallel interfaces
Robust operational temperature range supporting diverse environmental conditions
Compact package suitable for space-constrained applications
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