Manufacturer Part Number
CY7C1021V33-12ZC
Manufacturer
Infineon Technologies
Introduction
Asynchronous SRAM designed for high-speed memory applications
Product Features and Performance
Volatile memory technology
1Mbit memory size
64K x 16 memory organization
Parallel memory interface
Asynchronous SRAM technology
12ns write cycle time and access time
Surface mount 44-TSOP II package
Product Advantages
High speed access and write cycle
Optimized for high-performance computing tasks
Robust temperature range for diverse operational environments
Key Technical Parameters
Memory Type: Volatile SRAM
Access Time: 12ns
Supply Voltage: 3V to 3.6V
Operating Temperature: 0°C to 70°C
Memory Format: SRAM - Asynchronous
Memory Interface: Parallel
Quality and Safety Features
Operational reliability across a standard temperature range
Conforms to industry standards for electronic components
Compatibility
Compatible with systems requiring fast access times and a parallel interface
Interoperable with a wide array of standard digital circuits
Application Areas
High-speed computing
Networking and telecommunications
Industrial control systems
Gaming and entertainment electronics
Product Lifecycle
Currently an active product
No known discontinuation in the near future
Options available for replacements or upgrades in the same product family
Several Key Reasons to Choose This Product
High-speed access suitable for performance-intensive tasks
Reliable operation within specified temperature range
Wide compatibility with various digital circuits and systems
Active product status with support from Infineon Technologies
Quality construction from a reputable manufacturer in the semiconductor industry