Manufacturer Part Number
CY14V101LA-BA45XI
Manufacturer
Infineon Technologies
Introduction
High-performance 1Mbit Non-Volatile SRAM with parallel interface
Product Features and Performance
Non-Volatile Static RAM (NVSRAM)
1Mbit storage size
128K x 8 memory organization
Parallel memory interface
45ns Write Cycle Time
45ns Access Time
Operates on 2.7V to 3.6V supply voltage
Surface Mount 48-TFBGA package
Product Advantages
Fast access and write times
Data retention without battery backup
High reliability and endurance
Compatible with wide operating temperature range
Key Technical Parameters
Memory Type: NVSRAM
Memory Format: NVSRAM
Memory Size: 1Mbit
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Quality and Safety Features
Data retention without power
Unlimited read and write cycles
Reliable storage under a wide temperature range
Compatibility
Compatible with other devices using parallel memory interfaces
Application Areas
Industrial control systems
Automotive electronics
Networking and telecommunication
Gaming and entertainment systems
Product Lifecycle
Active product status
No current indication of discontinuation
Options for future upgrade paths available
Several Key Reasons to Choose This Product
Supports critical data retention without external batteries
Fast access times enhance performance in high-speed systems
Robust quality to withstand harsh environmental conditions
Easy integration with existing designs due to parallel interface
Suitable for applications where frequent writes are required
Supported by Infineon's renowned reliability and customer service