Manufacturer Part Number
CY14V104NA-BA45XI
Manufacturer
Infineon Technologies
Introduction
The CY14V104NA-BA45XI by Infineon Technologies is a 4Mbit Non-Volatile SRAM designed for high-reliability data storage.
Product Features and Performance
Non-Volatile SRAM (NVSRAM) technology
Memory size of 4Mbit
Organized as 256K x 16
Parallel memory interface
Write cycle time of 45ns
Access time of 45ns
Operating temperature range of -40°C to 85°C
Surface mount 48-TFBGA package
Product Advantages
Retains data without power
Fast write and access times
Durable under extreme temperature conditions
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 256K x 16
Write Cycle Time: 45ns
Access Time: 45ns
Voltage Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Extensively tested for temperature durability and data retention
Compatibility
Compatible with systems requiring a parallel NVSRAM in a 48-FBGA package
Application Areas
Industrial automation
Automotive electronics
Data logging systems
Mission-critical applications requiring non-volatile memory
Product Lifecycle
Product is currently active
Not nearing discontinuation
Future upgrades or replacements available
Several Key Reasons to Choose This Product
Reliable data retention without external power
Fast data access and write capabilities
Suitable for harsh environmental conditions
Direct compatibility with multiple systems
Long product lifecycle with support for future technology transitions