Manufacturer Part Number
CY14V104NA-BA25XI
Manufacturer
Infineon Technologies
Introduction
High-performance Non-Volatile SRAM (NVSRAM) with parallel interface
Product Features and Performance
4Mbit of storage capacity
25ns access time
Parallel memory interface
7V to 3.6V operating voltage range
Wide operating temperature range of -40°C to 85°C
Product Advantages
Non-volatile memory retains data without external power
Fast access time for real-time applications
Parallel interface for easy system integration
Wide temperature range for industrial and automotive applications
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 256K x 16
Memory Interface: Parallel
Access Time: 25ns
Write Cycle Time: 25ns
Supply Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
48-FBGA (6x10) package
Compatibility
Suitable for a wide range of embedded systems and industrial applications
Application Areas
Industrial automation
Automotive electronics
Medical devices
Telecommunication equipment
Consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-performance non-volatile memory with fast access and write times
Wide operating voltage and temperature range for versatile applications
Parallel interface for easy system integration
Compact and reliable 48-FBGA package
RoHS3 compliance for environmental sustainability