Manufacturer Part Number
CY14V104LA-BA45XI
Manufacturer
Infineon Technologies
Introduction
High-density 4Mbit Non-Volatile Static RAM with parallel interface
Product Features and Performance
4Mbit NVSRAM capacity
Parallel memory interface
Non-volatile data storage
Fast access time of 45 ns
Fast write cycle time of 45 ns
Tray packaging for secure delivery
Product Advantages
Retains data without power
Instantaneous non-volatile data storage
Compatible with high-speed microprocessor systems
Minimum power consumption in standby mode
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: NVSRAM
Memory Size: 4Mbit
Memory Organization: 512K x 8
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage Supply Range: 2.7V to 3.6V
Operating Temperature Range: -40°C to 85°C
Quality and Safety Features
Built-in error detection and correction
High reliability and durability
Conforms to industry safety and quality standards
Compatibility
Compatible with systems requiring a parallel memory interface
Surface Mount Technology for PCB assembly
Compatible with 48-TFBGA package requirements
Application Areas
Industrial electronics
Automotive systems
Networking hardware
Telecommunications
Computing systems
Product Lifecycle
Active product status
Not nearing discontinuation
Availability of replacements or upgrades
Several Key Reasons to Choose This Product
Durable non-volatile memory solution
Fast read and write operations support demanding applications
Wide operating temperature range suitable for extreme environments
Reliable data retention for mission-critical systems
Versatile supply voltage compatibility enhances system design flexibility
Well-suited for a variety of industrial, automotive, and computing applications
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