CY14V116N-BZ30XI - Cypress Semiconductor

Manufacturer Part Number

CY14V116N-BZ30XI

Manufacturer

infineon-technologies

Introduction

The CY14V116N-BZ30XI is a high-performance, low-power Non-Volatile SRAM (NVSRAM) memory chip from Infineon Technologies. It offers 16Mbit of storage capacity with a 1M x 16 memory organization, allowing for efficient and reliable data storage and retrieval.

Product Features and Performance

16Mbit Non-Volatile SRAM (NVSRAM) memory

1M x 16 memory organization

Parallel memory interface

30ns write cycle time (word, page)

30ns access time

7V to 3.6V operating voltage range

Operating temperature range of -40°C to 85°C

Product Advantages

Non-volatile data storage with SRAM-like performance

Seamless integration with a wide range of applications

Low power consumption for energy-efficient operation

Wide operating temperature range for use in harsh environments

Key Reasons to Choose This Product

High-capacity non-volatile memory for reliable data storage

Fast access and write speeds for real-time applications

Flexible voltage operation and temperature range

Infineon's reputation for quality and innovation in semiconductor solutions

Quality and Safety Features

Robust design with high reliability and endurance

Compliance with industry standards and safety regulations

Compatibility

The CY14V116N-BZ30XI is compatible with a variety of embedded systems, industrial equipment, and other applications that require high-performance, non-volatile memory.

Application Areas

Industrial automation and control systems

Telecommunications equipment

Automotive electronics

Medical devices

Military and aerospace applications

Product Lifecycle

The CY14V116N-BZ30XI is currently an active product. There are no direct equivalent or alternative models available from Infineon Technologies at this time. If customers require more information or need assistance with this product, they are advised to contact our website's sales team.