Manufacturer Part Number
CY14V101NA-BA45XIT
Manufacturer
Infineon Technologies
Introduction
The CY14V101NA-BA45XIT is a high-performance, low-power, 1Mbit NVSRAM (Non-Volatile SRAM) with a parallel interface. It combines the best features of SRAM and EEPROM/Flash, providing non-volatile data storage with fast read/write access times.
Product Features and Performance
1Mbit memory capacity with 64K x 16 organization
Parallel interface for fast data access
Low power consumption with 2.7V to 3.6V operating voltage
Wide operating temperature range of -40°C to 85°C
Fast read and write access times of 45ns
Unlimited read/write endurance and 20-year data retention
Product Advantages
Combines the speed and ease of use of SRAM with the non-volatile data storage of EEPROM/Flash
Allows seamless transition from volatile to non-volatile memory without software changes
Suitable for a wide range of applications that require fast, reliable, and power-efficient data storage
Key Reasons to Choose This Product
Unparalleled performance and reliability for critical systems
Optimal solution for applications that require instant-on and data protection
Cost-effective alternative to battery-backed SRAM or other non-volatile memory solutions
Quality and Safety Features
Rigorous quality control and testing procedures
Compliant with industry standards for safety and environmental regulations
Compatibility
The CY14V101NA-BA45XIT is compatible with a wide range of microcontrollers, processors, and other digital systems with a parallel memory interface.
Application Areas
Industrial automation and control systems
Medical devices and equipment
Telecommunications infrastructure
Automotive electronics
Military and aerospace systems
Portable and handheld devices
Product Lifecycle
The CY14V101NA-BA45XIT is an active product, and there are currently no plans for discontinuation. Equivalent or alternative models may be available from Infineon Technologies, and customers are advised to contact our website's sales team for more information.