CY14V101LA-BA25XI - Infineon Technologies

Manufacturer Part Number

CY14V101LA-BA25XI

Manufacturer

Infineon Technologies

Introduction

Non-Volatile SRAM with parallel interface, 1Mbit density

Product Features and Performance

Non-Volatile Static Random Access Memory (NVSRAM)

High-speed read and write with access time of 25 ns

Integrated with QuantumTrap technology for non-volatile storage

1Mbit memory size with 128K x 8 organization

7V to 3.6V supply voltage range

Operates within a temperature range of -40°C to 85°C

Product Advantages

Instant non-volatility without external battery

Unlimited read and write cycles

Data retention without power consumption

Fast access time enhances system performance

Key Technical Parameters

Memory Type: Non-Volatile

Memory Format: NVSRAM

Memory Size: 1Mbit

Memory Organization: 128K x 8

Write Cycle Time: 25ns

Access Time: 25 ns

Voltage Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Mounting Type: Surface Mount

Package / Case: 48-TFBGA

Supplier Device Package: 48-FBGA (6x10)

Quality and Safety Features

Robust data retention without power

High reliability and endurance

Compliant with industry standard safety and quality norms

Compatibility

Compatible with systems requiring parallel NVSRAM solutions

Well-suited for various memory intensive applications

Application Areas

Industrial automation and control systems

Networking and telecommunications

Servers and RAID systems

Medical equipment data storage

Automotive electronics

Product Lifecycle

Product Status: Active

Not nearing discontinuation

Replacements and upgrades may be available

Several Key Reasons to Choose This Product

Robust design ensures data integrity

Low power consumption for energy-efficient designs

Broad operating temperature range for harsh environments

Ease of integration with existing parallel interface systems

Reliable performance and long-term availability from Infineon Technologies