CY14E256LA-SZ25XI - Infineon Technologies

Manufacturer Part Number

CY14E256LA-SZ25XI

Manufacturer

Infineon Technologies

Introduction

CY14E256LA-SZ25XI is a Non-Volatile SRAM chip providing reliable data retention while eliminating the complexities, overhead, and system level reliability problems caused by battery-backed SRAM.

Product Features and Performance

Non-Volatile Static Random Access Memory

Memory Size of 256Kbit

Parallel Memory Interface for simple integration

25ns Write Cycle Time for fast data writing

25ns Access Time enabling quick data retrieval

Surface Mount 32-SOIC Package for compact PCB design

Operates across a wide Voltage Supply range (4.5V ~ 5.5V)

Product Advantages

Instant non-volatility without external battery

Data retention without the need for a battery

High-endurance non-volatile memory elements

Unlimited read and write cycles

Key Technical Parameters

Memory Type: NVSRAM

Memory Format: NVSRAM (Non-Volatile SRAM)

Memory Size: 256Kbit

Memory Organization: 32K x 8

Write Cycle Time - Word, Page: 25ns

Access Time: 25 ns

Voltage - Supply: 4.5V ~ 5.5V

Operating Temperature Range: -40°C ~ 85°C

Quality and Safety Features

Robust storage technology with inherent data reliability

Resistant to environmental hazards

Compatibility

Compatible with standard SRAM interfacing

Application Areas

Industrial electronics

Communication equipment

Data storage applications

Complex machinery where data persistence is crucial

Product Lifecycle

Obsoleted by manufacturer

Potential for replacements or upgrades as part of new design cycles

Several Key Reasons to Choose This Product

Provides a simple, battery-free solution for secure data storage

Durable operational lifespan and reliability under varying environmental conditions

Fast access times for both write and read operations improve system performance

Well-suited for critical data logging where power loss might occur

Industry-standard packaging compatible for space-sensitive applications