Manufacturer Part Number
BSO615NGXUMA1
Manufacturer
Infineon Technologies
Introduction
The BSO615NGXUMA1 is a dual N-channel MOSFET transistor in the 8-SOIC package, designed for automotive and other high-reliability applications.
Product Features and Performance
60V drain-to-source voltage rating
150mOhm maximum on-resistance
6A continuous drain current
380pF maximum input capacitance
20nC maximum gate charge
Logic-level gate threshold voltage
Product Advantages
Automotive-grade AEC-Q101 qualified
Robust SIPMOS technology
Wide operating temperature range (-55°C to 150°C)
Small 8-SOIC surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 150mOhm
Drain Current (Id): 2.6A
Input Capacitance (Ciss): 380pF
Gate Charge (Qg): 20nC
Gate Threshold Voltage (Vgs(th)): 2V
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality and reliability
Compatibility
Suitable for a wide range of automotive and industrial applications requiring high-performance, logic-level MOSFET switches
Application Areas
Automotive electronics
Industrial controls
Power management
Motor drives
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose this Product
Robust and reliable SIPMOS technology
Automotive-grade quality and AEC-Q101 qualification
Wide operating temperature range
Small 8-SOIC surface-mount package
Logic-level gate threshold voltage for easy driver compatibility