BSO612CV - Infineon Technologies

Manufacturer Part Number

BSO612CV

Manufacturer

Infineon Technologies

Introduction

The BSO612CV is a discrete semiconductor product from Infineon Technologies, specifically a transistor featuring an N and P-channel MOSFET array.

Product Features and Performance

N and P-Channel MOSFET configuration

60V Drain to Source Voltage (Vdss)

120mOhm maximum On-state Resistance (Rds(on)) at 3A, 10V

2W maximum Power Dissipation

-55°C to 150°C Operating Temperature Range

340pF maximum Input Capacitance (Ciss) at 25V

4V maximum Gate-Source Threshold Voltage (Vgs(th)) at 20A

5nC maximum Gate Charge (Qg) at 10V

Product Advantages

Compact surface mount package

Suitable for a wide range of applications

Robust performance across temperature range

Key Technical Parameters

Transistor Type: N and P-Channel MOSFET Array

Package: 8-SOIC (0.154", 3.90mm Width)

RoHS Compliance: Non-compliant

Quality and Safety Features

Reliable MOSFET technology from Infineon

Designed for safe operation within specified parameters

Compatibility

Suitable for use in a variety of electronic circuits and devices

Application Areas

Switching applications

Power management circuits

General-purpose amplifier and driver circuits

Product Lifecycle

This product is an active and available part from Infineon Technologies.

Replacements or upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

Robust performance across a wide temperature range

Compact surface mount package for efficient board layout

Reliable MOSFET technology from a trusted manufacturer

Suitable for a variety of switching and power management applications