Manufacturer Part Number
BSO615CGHUMA1
Manufacturer
Infineon Technologies
Introduction
The BSO615CGHUMA1 is a discrete semiconductor product, specifically a transistor with a field-effect transistor (FET) configuration.
Product Features and Performance
N and P-Channel MOSFET array
60V Drain-to-Source Voltage
110mΩ maximum On-Resistance at 3.1A, 10V
1A continuous drain current at 25°C
380pF maximum Input Capacitance at 25V
Logic Level Gate with 2V maximum Gate-to-Source Threshold Voltage at 20A
5nC maximum Gate Charge at 10V
Product Advantages
Efficient power switching performance
Wide operating temperature range (-55°C to 150°C)
Compact surface mount package
Suitable for a variety of power management applications
Key Technical Parameters
Drain-to-Source Voltage: 60V
On-Resistance: 110mΩ
Drain Current: 3.1A
Input Capacitance: 380pF
Gate-to-Source Threshold Voltage: 2V
Gate Charge: 22.5nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Surface mount package (8-SOIC)
Tape and reel packaging
Application Areas
Power management circuits
Motor control
Switching power supplies
Voltage regulators
Amplifier circuits
Product Lifecycle
Current product offering
Replacement and upgrade options may be available
Key Reasons to Choose
Efficient power switching performance
Wide operating temperature range
Compact surface mount package
Suitable for a variety of power management applications
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