Manufacturer Part Number
BSO613SPV
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
P-Channel MOSFET
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 130mΩ @ 3.44A, 10V
Continuous Drain Current (Id): 3.44A @ 25°C
Input Capacitance (Ciss): 875pF @ 25V
Power Dissipation (Max): 2.5W @ 25°C
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-state resistance for efficient power switching
High gate-source voltage handling capability
Suitable for a wide range of operating temperatures
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Threshold Voltage (Vgs(th)): 4V @ 1mA
Gate Charge (Qg): 30nC @ 10V
Drive Voltage (Rds(on) Max, Rds(on) Min): 10V
Quality and Safety Features
RoHS non-compliant
Compatibility
Mounting Type: Surface Mount
Package: 8-SOIC (0.154", 3.90mm Width)
Application Areas
Suitable for power switching applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Excellent performance characteristics, including low on-state resistance and high gate-source voltage handling
Wide operating temperature range suitable for various environments
Surface mount package for easy integration into circuit designs
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