Manufacturer Part Number
BSO615CGXUMA1
Manufacturer
Infineon Technologies
Introduction
This product is a dual N-channel and P-channel MOSFET array from Infineon Technologies.
Product Features and Performance
MOSFET technology
N and P-channel configuration
60V drain-to-source voltage
Low on-resistance of 110mΩ @ 3.1A, 10V and 300mΩ @ 2A, 10V
Continuous drain current up to 3.1A at 25°C
Wide operating temperature range of -55°C to 150°C
Input capacitance of 380pF @ 25V and 460pF @ 25V
Logic level gate with Vgs(th) of 2V @ 20A and 2V @ 450A
Gate charge of 22.5nC @ 10V and 20nC @ 10V
Product Advantages
Compact surface mount package
Dual N and P-channel configuration in a single package
Excellent thermal performance
Robust design for reliable operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
On-resistance (Rds(on)): 110mΩ @ 3.1A, 10V and 300mΩ @ 2A, 10V
Continuous drain current (Id): 3.1A at 25°C
Operating temperature range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
This MOSFET array is compatible with a wide range of electronic applications and circuits.
Application Areas
Power management
Motor control
Switching circuits
General-purpose amplification and switching
Product Lifecycle
The BSO615CGXUMA1 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Compact and space-saving dual N and P-channel configuration
Excellent thermal performance and reliability
Wide operating temperature range
Robust design for demanding applications
Compatibility with a variety of electronic circuits and systems
BSO612VVBsemi