Manufacturer Part Number
BSO613SPVGXUMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 compliant
Automotive, AEC-Q101, SIPMOS series
P-Channel MOSFET
Wide operating temperature range: -55°C to 150°C
High drain-source voltage: 60V
Low on-resistance: 130mΩ @ 3.44A, 10V
High continuous drain current: 3.44A
Low input capacitance: 875pF
Low power dissipation: 2.5W
Product Advantages
Suitable for automotive and high-reliability applications
Excellent thermal and electrical performance
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 130mΩ @ 3.44A, 10V
Continuous Drain Current (Id): 3.44A
Input Capacitance (Ciss): 875pF @ 25V
Power Dissipation (Pd): 2.5W
Quality and Safety Features
ROHS3 compliant
Automotive grade, AEC-Q101 qualified
Compatibility
Surface mount package: 8-SOIC (0.154", 3.90mm)
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent thermal and electrical performance for high-reliability applications
Compact surface mount package for space-constrained designs
Automotive-grade quality and reliability
Wide operating temperature range for harsh environments
Low on-resistance and high current handling capability for efficient power management