BC858CE6327HTSA1 - Infineon Technologies

Manufacturer Part Number

BC858CE6327HTSA1

Manufacturer

Infineon Technologies

Introduction

High-performance PNP bipolar transistor suitable for a wide range of applications.

Product Features and Performance

High transition frequency of 250 MHz

Low collector-emitter saturation voltage of 650 mV @ 5 mA, 100 mA

High DC current gain of 420 @ 2 mA, 5 V

Low collector cutoff current of 15 nA

Supports up to 100 mA of collector current

Operates at temperatures up to 150°C

Product Advantages

Reliable performance in high-frequency and high-current applications

Compact surface-mount package for efficient board space utilization

Compliant with RoHS3 environmental standards

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 30 V

Power Max: 330 mW

Operating Temperature: 150°C (TJ)

Transistor Type: PNP

Quality and Safety Features

RoHS3 compliant

Reliable and robust construction for long-term operation

Compatibility

Standard TO-236-3, SC-59, SOT-23-3 surface-mount package

Application Areas

Amplifiers

Switches

Drivers

Logic circuits

Power management

Instrumentation

Product Lifecycle

This product is currently in active production and availability.

Replacement or upgrade options may be available from Infineon or other manufacturers.

Key Reasons to Choose

High-performance characteristics suitable for high-frequency and high-current applications

Compact surface-mount package for efficient board space utilization

Reliable and robust design with RoHS3 compliance

Long-term product availability and potential upgrade options