BC858CE6327 - Infineon Technologies

Manufacturer Part Number

BC858CE6327

Manufacturer

Infineon Technologies

Introduction

The BC858CE6327 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.

Product Features and Performance

High current gain (hFE) of 420 (min) at 2 mA, 5 V

Transition frequency (fT) of 250 MHz

Low collector-emitter saturation voltage (Vce(sat)) of 650 mV at 5 mA, 100 mA

Low collector-emitter leakage current (ICBO) of 15 nA (max)

Power dissipation of 330 mW

Wide operating temperature range up to 150°C

Product Advantages

Excellent high-frequency performance

Low noise and distortion

Reliable and stable operation

Compact surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 30 V (max)

Collector Current (IC): 100 mA (max)

Power Dissipation: 330 mW

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free soldering

Reliable and durable construction

Compatibility

Compatible with various electronic circuit designs and applications

Application Areas

General-purpose amplification and switching circuits

High-frequency analog and digital circuits

Audio and instrumentation equipment

Telecommunications and industrial electronics

Product Lifecycle

The BC858CE6327 is an active product and not nearing discontinuation

Replacement or upgrade options are available from Infineon Technologies

Key Reasons to Choose This Product

Excellent high-frequency performance for demanding applications

Reliable and stable operation across a wide temperature range

Compact surface-mount package for efficient board space utilization

RoHS3 compliance for environmentally-friendly use

Availability of replacement and upgrade options from the manufacturer