Manufacturer Part Number
BC858CLT1G
Manufacturer
onsemi
Introduction
The BC858CLT1G is a discrete bipolar transistor (BJT) product from onsemi, a leading semiconductor manufacturer.
Product Features and Performance
Surface mount package (SOT-23-3) for compact design
Operates across a wide temperature range of -55°C to 150°C
Capable of handling up to 300mW of power
Supports a maximum collector-emitter voltage of 30V
Capable of up to 100mA of collector current
Extremely low collector cutoff current of 15nA
High current gain (hFE) of at least 420 at 2mA, 5V
Transition frequency of 100MHz
Product Advantages
Compact and space-saving surface mount package
Wide operating temperature range for diverse applications
Capable of handling significant power and current levels
High current gain for efficient amplification and switching
High-speed performance with 100MHz transition frequency
Key Technical Parameters
Package: SOT-23-3 (TO-236)
Power Rating: 300mW
Collector-Emitter Voltage (Max): 30V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 15nA
Current Gain (hFE Min): 420 @ 2mA, 5V
Transition Frequency: 100MHz
Quality and Safety Features
RoHS3 compliant for environmentally-friendly use
Reliable performance across the specified temperature range
Compatibility
Suitable for a wide range of electronic circuit designs requiring a PNP bipolar transistor
Application Areas
Analog and digital circuits
Amplifiers and switches
Power management systems
General-purpose electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available from onsemi or other manufacturers in the future
Key Reasons to Choose
Compact and space-efficient surface mount package
Wide operating temperature range for diverse applications
Capable of handling significant power and current levels
High current gain for efficient amplification and switching
High-speed performance with 100MHz transition frequency
RoHS3 compliance for environmental responsibility