Manufacturer Part Number
BC858CLT3G
Manufacturer
onsemi
Introduction
The BC858CLT3G is a PNP bipolar transistor from onsemi, designed for use in a variety of electronic circuits and applications.
Product Features and Performance
Operates in the -55°C to 150°C temperature range
Capable of handling up to 300 mW of power
Breakdown voltage of up to 30 V between collector and emitter
Collector current of up to 100 mA
Collector cutoff current of up to 15 nA
Saturation voltage of up to 650 mV at 5 mA and 100 mA collector current
Current gain (hFE) of at least 420 at 2 mA and 5 V
Transition frequency of 100 MHz
Product Advantages
Wide temperature operating range
High power handling capability
High breakdown voltage
Low saturation voltage
High current gain
High-frequency performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 30 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 15 nA
Collector-Emitter Saturation Voltage (VCE(sat)): 650 mV
Current Gain (hFE): 420 min
Transition Frequency (fT): 100 MHz
Quality and Safety Features
RoHS3 compliant
Packaged in a reliable SOT-23-3 (TO-236) surface mount package
Compatibility
Suitable for use in a wide range of electronic circuits and applications
Application Areas
Analog and digital circuits
Amplifiers
Switches
Biasing networks
General-purpose electronics
Product Lifecycle
This product is currently in production and available for purchase.
No information on discontinuation or replacement models at this time.
Several Key Reasons to Choose This Product
Wide operating temperature range
High power handling and breakdown voltage
Low saturation voltage for efficient operation
High current gain and high-frequency performance
Reliable surface mount packaging
RoHS3 compliance for environmentally-friendly use