BC858CDXV6T1G - onsemi

Manufacturer Part Number

BC858CDXV6T1G

Manufacturer

onsemi

Introduction

The BC858CDXV6T1G is a dual PNP bipolar junction transistor (BJT) array in a small SOT-563 surface mount package.

Product Features and Performance

Rated for 500mW of power dissipation

Collector-Emitter breakdown voltage up to 30V

Collector current up to 100mA

Low collector cutoff current of 15nA (max)

Transition frequency up to 100MHz

Excellent DC current gain of 420 (min) at 2mA, 5V

Product Advantages

Space-saving SOT-563 package

Dual transistor configuration for compact designs

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 30V (max)

Collector Current: 100mA (max)

DC Current Gain: 420 (min) at 2mA, 5V

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Supplied in tape and reel packaging

Compatibility

Can be used as a replacement or upgrade for similar dual PNP BJT arrays in SOT-563 and SOT-666 packages.

Application Areas

General-purpose amplifier and switching applications

Low-power analog and digital circuits

Consumer electronics, industrial equipment, etc.

Product Lifecycle

Currently in active production. No indications of discontinuation or upcoming replacements.

Key Reasons to Choose

Compact SOT-563 package for space-constrained designs

Excellent electrical performance with high current gain and transition frequency

Wide operating temperature range for reliability in diverse applications

RoHS3 compliance for use in modern electronic products