BC858C-7-F - Diodes Incorporated

Manufacturer Part Number

BC858C-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

Packaging: SOT-23-3

Base Product Number: BC858

Package/Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3

Packaging: Tape & Reel (TR)

Operating Temperature: -65°C to 150°C (TJ)

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage (Max): 30 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 15 nA

Collector-Emitter Saturation Voltage (Max): 650 mV @ 5 mA, 100 mA

Transistor Type: PNP

DC Current Gain (hFE) (Min): 420 @ 2 mA, 5 V

Transition Frequency: 200 MHz

Mounting Type: Surface Mount

Product Advantages

RoHS3 Compliance

Wide Operating Temperature Range

High Power Handling Capability

Low Saturation Voltage

High Current Gain

High Transition Frequency

Key Technical Parameters

Power Rating

Breakdown Voltage

Current Ratings

Saturation Voltage

Current Gain

Transition Frequency

Quality and Safety Features

RoHS3 Compliant

Suitable for high-reliability applications

Compatibility

Surface Mount Packaging

Suitable for a variety of electronic circuits and applications

Application Areas

General-purpose amplifier and switch applications

Telecommunications equipment

Consumer electronics

Industrial control systems

Product Lifecycle

Current production model

Replacements and upgrades may be available

Key Reasons to Choose This Product

RoHS3 compliance for environmental responsibility

Wide operating temperature range for versatile use

High power handling and low saturation voltage for efficient performance

High current gain and transition frequency for fast switching and amplification

Surface mount packaging for easy integration into modern electronics