BC856BE6327 - Infineon Technologies

Manufacturer Part Number

BC856BE6327

Manufacturer

Infineon Technologies

Introduction

This is a discrete bipolar junction transistor (BJT) from Infineon Technologies, a leading semiconductor manufacturer.

Product Features and Performance

PNP transistor type

High current gain (hFE min. 220 @ 2 mA, 5 V)

High frequency transition (fT 250 MHz)

Low collector-emitter saturation voltage (Vce(sat) max. 650 mV @ 5 mA, 100 mA)

Low collector cutoff current (ICBO max. 15 nA)

High collector-emitter breakdown voltage (VCEO max. 65 V)

Compact surface-mount package (TO-236-3, SC-59, SOT-23-3)

Automotive-grade AEC-Q101 qualification

Wide operating temperature range (-55°C to +150°C)

Product Advantages

Excellent high-frequency performance

High reliability and robustness for automotive and industrial applications

Small footprint and easy surface-mount assembly

RoHS3 compliant for environmentally-friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 65 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 15 nA

Collector-Emitter Saturation Voltage (Vce(sat)): 650 mV

DC Current Gain (hFE): 220 (min.)

Transition Frequency (fT): 250 MHz

Quality and Safety Features

AEC-Q101 automotive-grade qualification

RoHS3 compliant for restricted substances

Robust surface-mount package for reliability

Compatibility

This BJT is compatible with a wide range of electronic circuits, including:

Amplifiers

Switches

Voltage regulators

Driver circuits

Power supplies

Application Areas

Automotive electronics

Industrial controls

Consumer electronics

Power management

RF and wireless applications

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgraded options may become available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent high-frequency performance for RF and wireless applications

Robust automotive-grade reliability and qualification for harsh environments

Small and compact surface-mount package for space-constrained designs

Low collector-emitter saturation voltage for efficient power conversion

High current gain and low collector cutoff current for high-performance analog circuits