Manufacturer Part Number
BC856BMTF
Manufacturer
onsemi
Introduction
The BC856BMTF is a PNP bipolar junction transistor (BJT) in a SOT-23-3 surface mount package, designed for general-purpose amplifier and switching applications.
Product Features and Performance
Operating temperature up to 150°C (TJ)
Power dissipation of 310 mW
Collector-emitter breakdown voltage up to 65 V
Collector current up to 100 mA
Collector cutoff current of 15 nA (ICBO)
Collector-emitter saturation voltage of 650 mV @ 5 mA, 100 mA
DC current gain (hFE) of 200 min @ 2 mA, 5 V
Transition frequency of 150 MHz
Product Advantages
High breakdown voltage
Low collector cutoff current
Low saturation voltage
High current gain
High transition frequency
Small surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 65 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 15 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650 mV @ 5 mA, 100 mA
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2 mA, 5 V
Frequency Transition: 150 MHz
Quality and Safety Features
Compliant with RoHS directive
Suitable for lead-free reflow soldering
Compatibility
Compatible with standard PNP BJT applications
Application Areas
General-purpose amplifier and switching applications
Audio and consumer electronics
Industrial control and instrumentation
Product Lifecycle
This product is an active and widely available part
Replacements and upgrades are readily available from onsemi and other manufacturers
Several Key Reasons to Choose This Product
Excellent electrical performance with high breakdown voltage, low saturation voltage, and high current gain
Compact SOT-23-3 surface mount package for space-constrained designs
Wide operating temperature range up to 150°C
Compliance with RoHS directive for environmentally friendly applications
Availability of replacements and upgrades from the manufacturer and other sources