BC856BLT1G - onsemi

Manufacturer Part Number

BC856BLT1G

Manufacturer

onsemi

Introduction

Small-signal PNP bipolar junction transistor (BJT)

Designed for general-purpose amplifier and switching applications

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

Low collector-emitter saturation voltage: Vce(sat) ≤ 650 mV @ Ic = 100 mA, Ib = 5 mA

High DC current gain: hFE ≥ 220 @ Ic = 2 mA, Vce = 5 V

High transition frequency: fT = 100 MHz

Low collector cutoff current: ICBO ≤ 15 nA

Product Advantages

Suitable for high-speed switching and amplifier circuits

Excellent thermal stability

Compact SOT-23-3 surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 65 V

Collector Current (Ic): 100 mA

Power Dissipation: 300 mW

Quality and Safety Features

RoHS3 compliant

Meets environmental and safety standards

Compatibility

Compatible with various electronic circuits and systems that require a PNP bipolar transistor

Application Areas

General-purpose amplifiers

Switching circuits

Biasing circuits

Logic gates

Driver circuits

Product Lifecycle

This product is an active and widely available component

Replacements and upgrades may be available from onsemi or other semiconductor manufacturers

Key Reasons to Choose This Product

Reliable and robust performance across a wide temperature range

Excellent electrical characteristics, including low saturation voltage and high current gain

Compact and space-efficient SOT-23-3 package

RoHS3 compliance for environmental and safety considerations

Widely used and supported by the electronics industry