BC856BQ-7-F - Diodes Incorporated

Manufacturer Part Number

BC856BQ-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Designed for general-purpose amplifier and switching applications

Optimized for low-power, high-speed switching

Excellent frequency response up to 200MHz

Capable of handling up to 100mA of collector current

Breakdown voltage of up to 65V

Product Advantages

RoHS3 compliant

Available in space-saving SOT-23-3 package

Excellent thermal characteristics

Reliable performance across wide temperature range (-55°C to 150°C)

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 65V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 15nA

Vce Saturation Voltage (Max): 650mV @ 5mA, 100mA

DC Current Gain (Min): 220 @ 2mA, 5V

Transition Frequency: 200MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in wide temperature range

Compatibility

Suitable for a variety of general-purpose amplifier and switching applications

Application Areas

Amplifiers

Switches

General-purpose electronic circuits

Product Lifecycle

Currently in production

No known discontinuation plans

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose

Optimized for low-power, high-speed switching

Excellent frequency response up to 200MHz

Reliable performance across wide temperature range

RoHS3 compliance

Available in space-saving SOT-23-3 package