BC856BDW1T3G - onsemi

Manufacturer Part Number

BC856BDW1T3G

Manufacturer

onsemi

Introduction

The BC856BDW1T3G is a dual PNP bipolar junction transistor (BJT) array device.

Product Features and Performance

Dual PNP transistor array

High frequency performance up to 100MHz

Low collector-emitter saturation voltage of 650mV

Wide operating temperature range of -55°C to 150°C

High collector-emitter breakdown voltage of 65V

Low collector cutoff current of 15nA

High DC current gain of 220 minimum

Product Advantages

Compact surface mount package

Excellent high-frequency characteristics

Low power consumption

Reliable performance over wide temperature range

Suitable for a variety of analog and switching applications

Key Technical Parameters

Package: 6-TSSOP, SC-88, SOT-363

Power Rating: 380mW

Collector-Emitter Breakdown Voltage: 65V

Collector Current: 100mA

Collector Cutoff Current: 15nA

Collector-Emitter Saturation Voltage: 650mV

DC Current Gain: 220 minimum

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in a wide temperature range

Compatibility

The BC856BDW1T3G is compatible with a variety of analog and switching circuit designs.

Application Areas

Audio amplifiers

Switch mode power supplies

General-purpose analog and switching circuits

Product Lifecycle

The BC856BDW1T3G is an active product and is not nearing discontinuation. Replacement or upgrade options are available.

Key Reasons to Choose This Product

High-performance dual PNP transistor array

Excellent high-frequency characteristics

Low power consumption

Wide operating temperature range

Compact surface mount package

RoHS3 compliance for reliability and safety