BC856BDW1T1G - onsemi

Manufacturer Part Number

BC856BDW1T1G

Manufacturer

onsemi

Introduction

High-performance dual PNP bipolar junction transistor (BJT) array in a compact SC-88/SC70-6/SOT-363 package.

Product Features and Performance

Two matched PNP transistors in a single package

Low collector-emitter saturation voltage

High current gain

Wide operating temperature range of -55°C to 150°C

High switching speed with a transition frequency of 100MHz

Low collector cutoff current

Product Advantages

Compact and space-saving package

High reliability and performance

Ideal for various analog and digital circuit applications

Suitable for high-density surface mount designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 65V

Collector Current (max): 100mA

Collector Cutoff Current (max): 15nA

DC Current Gain (min): 220 @ 2mA, 5V

Collector-Emitter Saturation Voltage (max): 650mV @ 5mA, 100mA

Power Dissipation (max): 380mW

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free and halogen-free assembly processes

Compatibility

Suitable for various electronic circuits and applications where dual PNP BJTs are required

Application Areas

Analog and digital circuits

Switching and amplifier applications

Portable electronics

Telecommunications equipment

Industrial automation and control systems

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High performance and reliability

Compact and space-saving package

Wide operating temperature range

Suitable for high-density surface mount designs

RoHS3 compliant for environmentally-friendly applications

Availability and support from a reputable manufacturer like onsemi