Manufacturer Part Number
BC856B-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Package
Operating Temperature Range: -65°C to 150°C
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 65 V (Max)
Collector Current: 100 mA (Max)
Collector Cutoff Current: 15 nA (Max)
Collector-Emitter Saturation Voltage: 650 mV @ 5 mA, 100 mA
DC Current Gain (hFE): 220 (Min) @ 2 mA, 5 V
Transition Frequency: 200 MHz
Product Advantages
Compact surface mount package
Wide operating temperature range
High power and voltage handling capabilities
Low saturation voltage for efficient switching
Key Technical Parameters
Transistor Type: PNP
Packaging: SOT-23-3, Tape & Reel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Analog and digital circuits
Switching and amplifier applications
Power management and control systems
Product Lifecycle
This product is currently in production and available for purchase.
Key Reasons to Choose This Product
Compact and space-saving surface mount package
Wide operating temperature range for robust performance
High power and voltage handling capabilities
Low saturation voltage for efficient switching
Suitable for a wide range of electronic circuit applications