Manufacturer Part Number
NTB60N06G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Transistor, MOSFET (Single)
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage
±20V Gate-Source Voltage
14mΩ On-Resistance @ 30A, 10V
60A Continuous Drain Current @ 25°C
3220pF Input Capacitance @ 25V
150W Power Dissipation (Tj)
-55°C to 175°C Operating Temperature
Product Advantages
High current handling capability
Low on-resistance
Fast switching speed
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage: 60V
Gate-Source Voltage: ±20V
On-Resistance: 14mΩ @ 30A, 10V
Continuous Drain Current: 60A @ 25°C
Input Capacitance: 3220pF @ 25V
Power Dissipation: 150W (Tj)
Operating Temperature: -55°C to 175°C
Quality and Safety Features
MOSFET technology for reliable performance
Designed for high-power, high-current applications
Suitable for harsh operating environments
Compatibility
Surface mount package (DPAK)
Replaces similar MOSFET devices in various applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial controls
Automotive electronics
Product Lifecycle
Current production, no discontinuation planned
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent current handling and low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Wide operating temperature range for use in diverse environments
Reliable MOSFET technology for long-term durability
Surface mount package for easy integration into various circuit designs