NTB5605P - onsemi

Manufacturer Part Number

NTB5605P

Manufacturer

onsemi

Introduction

High-performance P-channel power MOSFET with low on-resistance and fast switching characteristics, suitable for a wide range of power conversion and control applications.

Product Features and Performance

Low on-resistance of 140 mΩ at 8.5 A, 5 V

High continuous drain current of 18.5 A at 25°C

Wide operating temperature range of -55°C to 175°C

Fast switching with low gate charge of 22 nC at 5 V

High drain-source voltage rating of 60 V

Suitable for surface mount applications

Product Advantages

Excellent power efficiency and low energy loss

Robust and reliable operation in high-temperature environments

Compact and space-saving design for high-density power conversion circuits

Optimized for fast switching and high-frequency applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 60 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 140 mΩ @ 8.5 A, 5 V

Continuous Drain Current (Id): 18.5 A at 25°C

Input Capacitance (Ciss): 1190 pF @ 25 V

Power Dissipation (Tc): 88 W

Quality and Safety Features

RoHS non-compliant

DPAK package for reliable surface mount assembly

Compatibility

Compatible with a wide range of power electronics and control applications

Application Areas

Power conversion and control circuits

Motor drives

Switched-mode power supplies

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and low energy loss

Wide operating temperature range for robust and reliable operation

Fast switching and high-frequency capabilities for high-performance power conversion

Compact and space-saving design for high-density power electronics

Proven reliability and quality from a reputable manufacturer