Manufacturer Part Number
NTB5605PT4G
Manufacturer
onsemi
Introduction
High-performance P-channel power MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
Low on-resistance of 140 mΩ @ 8.5A, 5V
High continuous drain current of 18.5A @ 25°C
Low gate charge of 22 nC @ 5V
High maximum drain-to-source voltage of 60V
Wide gate-to-source voltage range of ±20V
Product Advantages
Excellent thermal performance and power dissipation capability
Stable and reliable operation in high-power applications
Efficient power switching and control
Compact DPAK surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 140 mΩ @ 8.5A, 5V
Continuous Drain Current (Id): 18.5A @ 25°C
Input Capacitance (Ciss): 1190 pF @ 25V
Power Dissipation (Pd): 88W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Suitable for a wide range of power management, motor control, and switching applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability
Low on-resistance for efficient power switching
Wide operating temperature range for reliable operation
Compact surface mount DPAK package for space-constrained designs
Proven reliability and quality from onsemi