Manufacturer Part Number
NTB60N06T4G
Manufacturer
onsemi
Introduction
The NTB60N06T4G is a high-performance N-Channel MOSFET transistor designed for a variety of power management and control applications.
Product Features and Performance
60V drain-to-source voltage rating
14mΩ maximum on-resistance at 30A, 10V
60A continuous drain current at 25°C
3220pF maximum input capacitance at 25V
150W maximum power dissipation at Tj
Product Advantages
Low on-resistance for high efficiency
High current capability
Low gate charge for fast switching
Wide operating temperature range of -55°C to 175°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 14mΩ @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 3220pF @ 25V
Power Dissipation (Ptot): 2.4W @ Ta, 150W @ Tj
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount assembly
Compatibility
This MOSFET is compatible with a wide range of power management and control applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Battery management systems
Industrial and consumer electronics
Product Lifecycle
The NTB60N06T4G is an active product and there are no plans for discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High efficiency due to low on-resistance
High current capability for demanding applications
Fast switching performance with low gate charge
Wide operating temperature range for robust design
Reliable DPAK package for surface mount assembly
RoHS3 compliance for environmentally-conscious designs