Manufacturer Part Number
NTB6410ANT4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Designed for high-power, high-efficiency applications
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
High drain-to-source voltage of 100V
Low on-resistance (Rds(on)) of 13mΩ @ 76A, 10V
High continuous drain current of 76A (Tc)
Low input capacitance of 4500pF @ 25V
High power dissipation of 188W (Tc)
Product Advantages
Excellent thermal performance
High power density
Efficient power conversion
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Rds(on) (Max): 13mΩ @ 76A, 10V
Continuous Drain Current (Id): 76A (Tc)
Input Capacitance (Ciss): 4500pF @ 25V
Power Dissipation (Max): 188W (Tc)
Quality and Safety Features
ROHS3 compliant
Reliable and durable construction
Compatibility
Surface mount package (DPAK)
Suitable for a wide range of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Power inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent thermal performance and high power density
Efficient power conversion with low on-resistance
Reliable and robust design for demanding applications
Wide operating temperature range and high voltage capability
Compatibility with surface mount assembly processes
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